Effect of Deposition Temperature on the Properties of Copper-Zinc Sulphide Thin Films using Mixed Copper and Zinc Dithiocarbamate Precursors

Isostructural copper-zinc mixed metal complexes for single source deposition of Cu-ZnO composite thin films.

The mixed metal complex [Zn(TFA)(3)(μ-OH)Cu(3)(dmae)(3)Br]·THF (1) and its isostructural analogues ([Zn(TFA)(3)(μ-OH)Cu(3)(dmae)(3)Cl]·THF (2) and [Zn(TFA)(3)(μ-OH)Cu(3)(dmae)(3)Cl/Br]·THF (3)) have been prepared by a simple metal ligand assembly method and were characterized by their melting points, elemental analysis, IR spectroscopy, thermogravimetry and single crystal X-ray structures. The ...

Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized...

The influence of sulphide transport on the growth and properties of copper sulphide films on copper

architecture and engineering of nanoscale sculptured thin films and determination of their properties

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Annealing temperature effect on nanostructure and phase transition of Copper Oxide thin films

This paper addresses the annealing temperature effect on nanostructure and phase transition of copper oxide thin films, deposited by PVD method on glass substrate (at 110 nm thickness) and post annealed at different temperatures (200-400°C) with a flow of 1 cm3s-1 Oxygen. The X-ray diffraction (XRD) was employed for crystallographic and phase analyses, while atomic force m...